Table of Contents

Material-Specific Recognition Memory Deficits Elicited by Unilateral Hippocampal Electrical Stimulation

  1. Peter C. van Rijen6
  1. Departments of 1Clinical Neurophysiology, and 2Neurosurgery, King's College Hospital, London, SE5 9RS, United Kingdom, 3Department of Psychology and 4Neuroimaging Research Group, Institute of Psychiatry, London, SE5 8AF, United Kingdom, 5Dutch Epilepsy Clinics Foundation, Heemstede, 2103 SW The Netherlands, and 6Department of Neurosurgery, University Medical Center Utrecht, Utrecht, 3508 GA The Netherlands

Abstract

Although the medial temporal lobe is thought to be critical for recognition memory (RM), the specific role of the hippocampus in RM remains uncertain. We investigated the effects of transient unilateral hippocampal electrical stimulation (ES), subthreshold for afterdischarge, on delayed item RM in epilepsy patients implanted with bilateral hippocampal depth electrodes. RM was assessed using a novel computer-controlled test paradigm in which ES to left or right hippocampus was either absent (baseline) or synchronized with item presentation. Subsequent yes-no RM performance revealed a double dissociation between material-specific RM and the lateralization of ES. Left hippocampal ES produced word RM deficits, whereas right hippocampal ES produced face RM deficits. Our findings provide the first demonstration in humans that selective unilateral stimulation-induced hippocampal disruption is sufficient to produce impairments on delayed RM tasks and provide support for the material-specific laterality of hippocampal function with respect to RM.

  • Received September 24, 2003.
  • Revision received December 12, 2003.
  • Accepted December 16, 2003.